CSD13201W10
- Manufacturer's Part No.:CSD13201W10
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 12V 1.6A 4DSBGA
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 86000
- Available: 29000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.35310 | US $0.35 |
10+ | US $0.23540 | US $2.35 |
30+ | US $0.17655 | US $5.30 |
100+ | US $0.14124 | US $14.12 |
500+ | US $0.12947 | US $64.74 |
1000+ | US $0.11770 | US $117.70 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD13201W10
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width0m
- Height625μm
- Length0m
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Rise Time5.9ns
- Thickness650μm
- Vgs (Max)±8V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormBALL
- Number of Pins4
- Operating ModeENHANCEMENT MODE
- Package / Case4-UFBGA, DSBGA
- Contact PlatingCopper, Silver, Tin
- Fall Time (Typ)9.7 ns
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Base Part NumberCSD13201
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time6 Weeks
- Power Dissipation1.2W
- Terminal PositionBOTTOM
- Number of Channels1
- Number of Elements1
- Turn On Delay Time3.9 ns
- Vgs(th) (Max) @ Id1.1V @ 250μA
- Turn-Off Delay Time14.4 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max1.2W Ta
- Number of Terminations4
- Rds On (Max) @ Id, Vgs34m Ω @ 1A, 4.5V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)22.6 pF
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs2.9nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)1.6A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.053Ohm
- Pulsed Drain Current-Max (IDM)20.2A
- Drain to Source Breakdown Voltage12V
- Input Capacitance (Ciss) (Max) @ Vds462pF @ 6V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Current - Continuous Drain (Id) @ 25°C1.6A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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