CSD13302W
- Manufacturer's Part No.:CSD13302W
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- Series:NexFET™
- Description:MOSFET N-CH 12V 1.6A
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- In Stock: 10000
- Available: 3000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.34440 | US $0.34 |
10+ | US $0.22960 | US $2.30 |
30+ | US $0.17220 | US $5.17 |
100+ | US $0.13776 | US $13.78 |
500+ | US $0.12628 | US $63.14 |
1000+ | US $0.11480 | US $114.80 |
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- Description
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The CSD13302W is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for applications requiring efficient power management, such as in power supplies, motor drivers, and other electronic circuits.
Key Features:
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Type: The CSD13302W is an N-channel MOSFET, which means it conducts when a positive voltage is applied to its gate relative to its source terminal.
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Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
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Current Rating: The device can handle a continuous drain current (I_D) of approximately 60A, which allows it to manage significant power loads efficiently.
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R_DS(on): One of the standout features of the CSD13302W is its low on-resistance (R_DS(on)), which is usually around 5.5 mΩ at a gate voltage of 10V. This low resistance minimizes power loss and heat generation during operation, enhancing overall efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, allowing for easy interfacing with low-voltage control signals.
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Package Type: The CSD13302W is housed in a compact, thermally efficient package, often in a DPAK or similar surface-mount configuration, which facilitates easy integration into circuit boards and helps with heat dissipation.
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Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a maximum junction temperature rating of around 150°C, making it suitable for demanding environments.
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Applications: Common applications for the CSD13302W include synchronous rectification in power supplies, DC-DC converters, battery management systems, and motor control circuits.
Performance Characteristics:
- Switching Speed: The CSD13302W features fast switching capabilities, which is essential for high-frequency applications, reducing switching losses and improving overall efficiency.
- Safe Operating Area (SOA): The device is designed to operate within a specified safe operating area, ensuring reliability and longevity in various applications.
Conclusion:
The CSD13302W from Texas Instruments is a versatile and efficient power MOSFET that excels in applications requiring high current handling and low power loss. Its combination of low on-resistance, high current capacity, and robust thermal performance makes it an ideal choice for modern power management solutions.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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