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CSD13383F4

  • In Stock: 80945
  • Available: 16

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.24300US $0.24
10+US $0.16200US $1.62
30+US $0.12150US $3.65
100+US $0.09720US $9.72
500+US $0.08910US $44.55
1000+US $0.08100US $81.00

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Description

The CSD13383F4 is a NexFET™ power MOSFET manufactured by Texas Instruments. This MOSFET is part of the CSD series, known for its high-performance characteristics and efficiency in power management applications. The CSD13383F4 features a low on-resistance and fast switching speed, making it suitable for applications requiring high efficiency and power density, such as voltage regulation, motor control, and DC-DC converters. With its compact and thermally efficient package, this MOSFET offers improved thermal performance and reliability in demanding environments.

Specifications:

  • Drain-Source Voltage (V<sub>DSS</sub>): 30V
  • Continuous Drain Current (I<sub>D</sub>): 50A
  • On-Resistance (R<sub>DS(ON)</sub>): 2.5 mΩ (max) @ V<sub>GS</sub> = 10V
  • Gate-Source Voltage (V<sub>GS</sub>): ±20V
  • Input Capacitance (C<sub>ISS</sub>): 5700 pF (typ)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SON (5x6 mm)

Features:

  • High Efficiency: Low on-resistance (R<sub>DS(ON)</sub>) ensures minimal power dissipation and high efficiency.
  • Fast Switching Speed: Enables rapid switching between conducting and non-conducting states, reducing switching losses.
  • Enhanced Thermal Performance: Housed in a SON package, offering improved thermal characteristics for better heat dissipation.
  • Low Input Capacitance: Reduces gate drive requirements and improves switching performance.
  • RoHS Compliant: Manufactured in compliance with RoHS directives, ensuring environmental responsibility.

Applications:

  • Voltage Regulation
  • Motor Control
  • DC-DC Converters
  • Power Supplies
  • Battery Management Systems
  • Automotive Electronics
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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