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CSD16321Q5

  • In Stock: 51354
  • Available: 124627

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.34600US $2.35
10+US $1.56400US $15.64
30+US $1.17300US $35.19
100+US $0.93840US $93.84
500+US $0.86020US $430.10
1000+US $0.78200US $782.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD16321Q5
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6mm
  • Height
    1.05mm
  • Length
    5mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Rise Time
    15ns
  • Thickness
    1mm
  • Vgs (Max)
    +10V, -8V
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    1.1 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerTDFN
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    17 ns
  • Base Part Number
    CSD16321
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    6 Weeks
  • Power Dissipation
    3.1W
  • Terminal Position
    DUAL
  • Threshold Voltage
    1.1V
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    1
  • Turn On Delay Time
    9 ns
  • Vgs(th) (Max) @ Id
    1.4V @ 250μA
  • Dual Supply Voltage
    25V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    27 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    3.1W Ta
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    2.4m Ω @ 25A, 8V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    10V
  • Continuous Drain Current (ID)
    100A
  • Peak Reflow Temperature (Cel)
    260
  • Drain-source On Resistance-Max
    0.0035Ohm
  • Pulsed Drain Current-Max (IDM)
    200A
  • Drain to Source Breakdown Voltage
    25V
  • Input Capacitance (Ciss) (Max) @ Vds
    3100pF @ 12.5V
  • Drive Voltage (Max Rds On,Min Rds On)
    3V 8V
  • Current - Continuous Drain (Id) @ 25°C
    31A Ta 100A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

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  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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