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CSD16323Q3

  • In Stock: 135785
  • Available: 208752

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.86211US $0.86
10+US $0.57474US $5.75
30+US $0.43106US $12.93
100+US $0.34484US $34.48
500+US $0.31611US $158.06
1000+US $0.28737US $287.37

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Description

CSD16323Q3 is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for high-efficiency switching applications, making it suitable for various electronic devices and power management systems.

Key Features:

  1. Type: N-channel MOSFET
  2. Voltage Rating: Typically, this model can handle high voltages, often in the range of 30V to 60V, making it suitable for applications that require robust performance under high voltage conditions.
  3. Current Rating: The device can support significant continuous drain current, often around 20A or more, depending on the specific application and thermal management.
  4. RDS(on): The on-resistance (RDS(on)) is low, which minimizes power loss during operation and enhances efficiency. This is a critical parameter for applications where heat dissipation is a concern.
  5. Package Type: The CSD16323Q3 is typically housed in a compact surface-mount package, such as a SOIC or DPAK, which facilitates easy integration into circuit boards and helps save space in electronic designs.
  6. Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with thermal resistance specifications that allow for effective heat dissipation.

Applications:

  • Power Management: Ideal for DC-DC converters, power supplies, and battery management systems.
  • Motor Control: Used in applications requiring efficient control of motors, such as in robotics and automotive systems.
  • Consumer Electronics: Commonly found in devices like laptops, smartphones, and other portable electronics where power efficiency is crucial.

Electrical Characteristics:

  • Gate Threshold Voltage (Vgs(th)): The voltage at which the MOSFET begins to conduct, typically in the range of 1V to 3V.
  • Input Capacitance (Ciss): A measure of the gate capacitance, which affects the switching speed and efficiency of the device.
  • Switching Speed: Fast switching capabilities, making it suitable for high-frequency applications.

Conclusion:

The CSD16323Q3 from Texas Instruments is a versatile and efficient power MOSFET that plays a critical role in modern electronic designs. Its combination of high voltage and current ratings, low on-resistance, and compact packaging makes it an excellent choice for engineers looking to optimize power management and enhance the performance of their electronic systems.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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