CSD16325Q5
- Manufacturer's Part No.:CSD16325Q5
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 25V 5X6 100A 8SON
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 7500
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.73420 | US $2.73 |
10+ | US $1.82280 | US $18.23 |
30+ | US $1.36710 | US $41.01 |
100+ | US $1.09368 | US $109.37 |
500+ | US $1.00254 | US $501.27 |
1000+ | US $0.91140 | US $911.40 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD16325Q5
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width6mm
- Height1.05mm
- Length5mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingCut Tape (CT)
- Pin Count8
- Rise Time16ns
- Thickness1mm
- Vgs (Max)+10V, -8V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.1 V
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Fall Time (Typ)12 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberCSD16325
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time6 Weeks
- Power Dissipation3.1W
- Terminal PositionDUAL
- Threshold Voltage1.1V
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Turn On Delay Time10.5 ns
- Vgs(th) (Max) @ Id1.4V @ 250μA
- Dual Supply Voltage25V
- Radiation HardeningNo
- Turn-Off Delay Time32 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max3.1W Ta
- Number of Terminations5
- Rds On (Max) @ Id, Vgs2m Ω @ 30A, 8V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)33A
- Gate Charge (Qg) (Max) @ Vgs25nC @ 4.5V
- Gate to Source Voltage (Vgs)10V
- Avalanche Energy Rating (Eas)500 mJ
- Continuous Drain Current (ID)100A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.0027Ohm
- Input Capacitance (Ciss) (Max) @ Vds4000pF @ 12.5V
- Drive Voltage (Max Rds On,Min Rds On)3V 8V
- Current - Continuous Drain (Id) @ 25°C33A Ta 100A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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