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CSD16404Q5A

  • In Stock: 36183
  • Available: 17500

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.30620US $1.31
10+US $0.87080US $8.71
30+US $0.65310US $19.59
100+US $0.52248US $52.25
500+US $0.47894US $239.47
1000+US $0.43540US $435.40

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  • Description
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Description

The CSD16404Q5A is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It is designed for applications requiring efficient power management, such as in DC-DC converters, power supplies, and motor control systems.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The CSD16404Q5A is housed in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
  3. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of around 40V, making it suitable for low to medium voltage applications.
  4. Current Rating: The device can handle continuous drain currents of up to 60A, depending on the thermal conditions and PCB layout.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically in the range of a few milliohms, which minimizes conduction losses and improves overall efficiency.
  6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed to be low, allowing for easy drive with standard logic levels.
  7. Switching Speed: The CSD16404Q5A features fast switching capabilities, which is essential for high-frequency applications, reducing switching losses and improving efficiency.
  8. Thermal Performance: The QFN package provides excellent thermal performance, allowing for effective heat dissipation, which is critical in high-power applications.

Applications:

  • DC-DC Converters: Used in step-down (buck) and step-up (boost) converters for efficient voltage regulation.
  • Power Management: Ideal for power management ICs in consumer electronics, automotive, and industrial applications.
  • Motor Control: Suitable for driving motors in various applications, including robotics and automation systems.

Electrical Characteristics:

  • Input Capacitance (C_iss): The input capacitance is typically low, which helps in reducing the drive power required for switching.
  • Output Capacitance (C_oss): The output capacitance is also optimized for fast switching applications.
  • Reverse Recovery: The device exhibits minimal reverse recovery characteristics, making it suitable for synchronous rectification.

Conclusion:

The CSD16404Q5A from Texas Instruments is a versatile and efficient power MOSFET that meets the demands of modern power electronics applications. Its combination of low on-resistance, high current handling capability, and fast switching performance makes it an excellent choice for engineers looking to optimize power efficiency in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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