CSD16407Q5C
- Manufacturer's Part No.:CSD16407Q5C
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 25V 100A 8SON
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 11439
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.67540 | US $2.68 |
10+ | US $1.78360 | US $17.84 |
30+ | US $1.33770 | US $40.13 |
100+ | US $1.07016 | US $107.02 |
500+ | US $0.98098 | US $490.49 |
1000+ | US $0.89180 | US $891.80 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD16407Q5C
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width6mm
- Height1.05mm
- Length5mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count8
- Rise Time18.4ns
- Thickness1mm
- Vgs (Max)+16V, -12V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.6 V
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormNO LEAD
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)9 ns
- Base Part NumberCSD16407
- Lifecycle StatusNRND (Last Updated: 4 weeks ago)
- Power Dissipation3.1W
- Terminal PositionDUAL
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Turn On Delay Time11.9 ns
- Vgs(th) (Max) @ Id1.9V @ 250μA
- Turn-Off Delay Time16 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max3.1W Ta
- Number of Terminations5
- Rds On (Max) @ Id, Vgs2.4m Ω @ 25A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min25V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
- Gate to Source Voltage (Vgs)16V
- Continuous Drain Current (ID)100A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)25V
- Drain-source On Resistance-Max0.0033Ohm
- Pulsed Drain Current-Max (IDM)200A
- Input Capacitance (Ciss) (Max) @ Vds2660pF @ 12.5V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C31A Ta 100A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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