CSD16409Q3
- Manufacturer's Part No.:CSD16409Q3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 25V 60A 8-SON
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 112000
- Available: 239429
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.35400 | US $0.35 |
10+ | US $0.23600 | US $2.36 |
30+ | US $0.17700 | US $5.31 |
100+ | US $0.14160 | US $14.16 |
500+ | US $0.12980 | US $64.90 |
1000+ | US $0.11800 | US $118.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD16409Q3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width3.3mm
- Height1.1mm
- Length3.3mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count8
- Rise Time10.6ns
- Thickness1mm
- Vgs (Max)+16V, -12V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs2 V
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)3.4 ns
- Base Part NumberCSD16409
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time12 Weeks
- Power Dissipation2.6W
- Terminal PositionDUAL
- Threshold Voltage2V
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Turn On Delay Time6.5 ns
- Vgs(th) (Max) @ Id2.3V @ 250μA
- Dual Supply Voltage25V
- Radiation HardeningNo
- Turn-Off Delay Time6.3 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.6W Ta
- Number of Terminations5
- Rds On (Max) @ Id, Vgs8.2m Ω @ 17A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)55 pF
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs5.6nC @ 4.5V
- Gate to Source Voltage (Vgs)16V
- Avalanche Energy Rating (Eas)72 mJ
- Continuous Drain Current (ID)60A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)90A
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds800pF @ 12.5V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C15A Ta 60A Tc
Environmental & Export Classifications
- HTSUS0000.00.0000
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)Vendor Undefined
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