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CSD16570Q5BT
- Manufacturer’s Part#:CSD16570Q5BT
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- ECAD Model:
- Description:MOSFET N-CH 25V 100A 8VSON
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 10000
- Available: 56679
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $59.60000 | US $59.60 |
10+ | US $44.70000 | US $447.00 |
30+ | US $38.74000 | US $1162.20 |
100+ | US $34.27000 | US $3427.00 |
500+ | US $32.18400 | US $16092.00 |
1000+ | US $29.80000 | US $29800.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part #CSD16570Q5BT
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width6mm
- Length5mm
- Weight24.012046mg
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Rise Time43ns
- Thickness950μm
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormNO LEAD
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Contact PlatingGold
- Fall Time (Typ)72 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberCSD16570
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- Terminal PositionDUAL
- Threshold Voltage1.5V
- Additional FeatureAVALANCHE RATED
- Number of Channels1
- Number of Elements1
- Turn On Delay Time5 ns
- Vgs(th) (Max) @ Id1.9V @ 250μA
- Turn-Off Delay Time156 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max3.2W Ta 195W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations5
- Rds On (Max) @ Id, Vgs0.59m Ω @ 50A, 10V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)59A
- Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)100A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)400A
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds14000pF @ 12V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C100A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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