CSD16570Q5B
- Manufacturer's Part No.:CSD16570Q5B
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- Series:NexFET™
- Description:MOSFET N-CH 25V 100A 8VSON
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- In Stock: 105360
- Available: 93166
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $81.40000 | US $81.40 |
10+ | US $61.05000 | US $610.50 |
30+ | US $52.91000 | US $1587.30 |
100+ | US $46.80500 | US $4680.50 |
500+ | US $43.95600 | US $21978.00 |
1000+ | US $40.70000 | US $40700.00 |
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- Description
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The CSD16570Q5B is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This device is designed for applications requiring efficient power management and switching capabilities.
Key Features:
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Voltage Rating: The CSD16570Q5B typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low-voltage applications.
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Current Rating: It can handle continuous drain current (I_D) of up to 70A, which allows it to manage significant power loads effectively.
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R_DS(on): One of the standout features of this MOSFET is its low on-resistance (R_DS(on)), which is typically around 5.5 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing overall efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, allowing for easy drive with standard logic levels.
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Package Type: The CSD16570Q5B is housed in a compact QFN (Quad Flat No-lead) package, which provides excellent thermal performance and minimizes the footprint on the PCB. The package design also aids in efficient heat dissipation, crucial for high-current applications.
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Thermal Resistance: The device features low thermal resistance, which helps in maintaining operational stability and reliability under high load conditions.
Applications:
The CSD16570Q5B is ideal for a variety of applications, including:
- DC-DC Converters: Used in power supply circuits for efficient voltage regulation.
- Motor Drives: Suitable for driving motors in industrial and consumer applications.
- Power Management: Effective in battery management systems and power distribution networks.
- Load Switching: Can be used for switching loads in various electronic devices.
Performance Characteristics:
- Fast Switching Speed: The device is designed for high-speed switching, which is essential for applications like synchronous rectification and high-frequency converters.
- Robustness: The CSD16570Q5B is built to withstand harsh operating conditions, making it reliable for long-term use in demanding environments.
Conclusion:
Overall, the CSD16570Q5B from Texas Instruments is a versatile and efficient N-channel MOSFET that excels in power management applications. Its combination of high current handling, low on-resistance, and compact packaging makes it a preferred choice for engineers looking to optimize performance in their designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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