CSD17309Q3
- Manufacturer's Part No.:CSD17309Q3
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- Series:NexFET™
- Description:MOSFET N-CH 30V 60A 8SON
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- In Stock: 10000
- Available: 204910
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.76748 | US $1.77 |
10+ | US $1.17832 | US $11.78 |
30+ | US $0.88374 | US $26.51 |
100+ | US $0.70699 | US $70.70 |
500+ | US $0.64808 | US $324.04 |
1000+ | US $0.58916 | US $589.16 |
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- Description
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CSD17309Q3 is a specific part number that typically refers to a type of electronic component, likely a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Texas Instruments or a similar manufacturer. Here’s a detailed description of what you might expect from such a component:
General Overview
The CSD17309Q3 is designed for high-efficiency power management applications. It is commonly used in DC-DC converters, power supplies, and other applications where efficient switching is crucial. The device is characterized by its low on-resistance and fast switching capabilities, making it suitable for both high-frequency and high-current applications.
Physical Characteristics
- Package Type: The CSD17309Q3 is typically housed in a compact surface-mount package, such as a QFN (Quad Flat No-lead) or similar, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
- Dimensions: The package dimensions are designed to minimize parasitic inductance and resistance, which is critical for high-speed applications.
Electrical Specifications
- Voltage Rating: The CSD17309Q3 usually has a maximum drain-source voltage (V_DS) rating, often in the range of 30V to 40V, making it suitable for low to medium voltage applications.
- Current Rating: The continuous drain current (I_D) rating can be significant, often exceeding 30A, depending on the thermal conditions and PCB layout.
- On-Resistance (R_DS(on)): One of the key features is its low on-resistance, typically in the milliohm range, which helps reduce power losses during operation.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is designed to ensure that the MOSFET turns on efficiently with standard logic levels.
Performance Characteristics
- Switching Speed: The CSD17309Q3 is optimized for fast switching, which is essential for applications requiring high efficiency and minimal heat generation.
- Thermal Performance: The device is designed to handle significant power dissipation, with thermal resistance specifications that allow for effective heat dissipation when mounted on a PCB.
Applications
- Power Management: Ideal for use in power supplies, battery management systems, and DC-DC converters.
- Consumer Electronics: Commonly found in devices such as laptops, smartphones, and other portable electronics where efficient power conversion is critical.
- Automotive: May also be used in automotive applications, particularly in electric vehicles and advanced driver-assistance systems (ADAS).
Conclusion
The CSD17309Q3 from Texas Instruments is a versatile and efficient power MOSFET that meets the demands of modern electronic applications. Its combination of low on-resistance, high current handling, and fast switching capabilities makes it a preferred choice for engineers looking to optimize power efficiency in their designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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