CSD17312Q5
- Manufacturer's Part No.:CSD17312Q5
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 30V 100A 8SON
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 23300
- Available: 91507
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.15400 | US $2.15 |
10+ | US $1.43600 | US $14.36 |
30+ | US $1.07700 | US $32.31 |
100+ | US $0.86160 | US $86.16 |
500+ | US $0.78980 | US $394.90 |
1000+ | US $0.71800 | US $718.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD17312Q5
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width6mm
- Height1.05mm
- Length5mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count8
- Rise Time27ns
- Thickness1mm
- Vgs (Max)+10V, -8V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Contact PlatingGold
- Fall Time (Typ)23 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberCSD17312
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time12 Weeks
- Power Dissipation3.2W
- Terminal PositionDUAL
- Threshold Voltage1.1V
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Turn On Delay Time9.5 ns
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time35 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max3.2W Ta
- Number of Terminations5
- Rds On (Max) @ Id, Vgs1.5m Ω @ 35A, 8V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs36nC @ 4.5V
- Gate to Source Voltage (Vgs)10V
- Continuous Drain Current (ID)100A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.0024Ohm
- Pulsed Drain Current-Max (IDM)200A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds5240pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)3V 8V
- Current - Continuous Drain (Id) @ 25°C38A Ta 100A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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