CSD17506Q5A
- Manufacturer's Part No.:CSD17506Q5A
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 30V 100A 8SON
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 371500
- Available: 136936
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $6.44000 | US $6.44 |
10+ | US $5.79600 | US $57.96 |
30+ | US $4.50800 | US $135.24 |
100+ | US $3.70300 | US $370.30 |
500+ | US $3.54200 | US $1771.00 |
1000+ | US $3.22000 | US $3220.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD17506Q5A
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width6mm
- Height1.1mm
- Length4.9mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count8
- Rise Time13ns
- Thickness1mm
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs1.3 V
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)5.3 ns
- Base Part NumberCSD17506
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time12 Weeks
- Power Dissipation3.2W
- Terminal PositionDUAL
- Threshold Voltage1.3V
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Turn On Delay Time7.5 ns
- Vgs(th) (Max) @ Id1.8V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time13 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max3.2W Ta
- Number of Terminations5
- Rds On (Max) @ Id, Vgs4m Ω @ 20A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)65 pF
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)23A
- Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)259 mJ
- Continuous Drain Current (ID)100A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.0053Ohm
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds1650pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C100A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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