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CSD17522Q5A

  • In Stock: 7000
  • Available: 5000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.49520US $1.50
10+US $0.99680US $9.97
30+US $0.74760US $22.43
100+US $0.59808US $59.81
500+US $0.54824US $274.12
1000+US $0.49840US $498.40

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Description

The CSD17522Q5A is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-frequency switching applications.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The device is housed in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
  3. Voltage Rating: The CSD17522Q5A typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
  4. Current Rating: It can handle continuous drain currents of up to 60A, depending on the thermal conditions and PCB layout, which makes it capable of driving significant loads.
  5. R_DS(on): The on-resistance (R_DS(on)) is very low, typically in the range of a few milliohms, which minimizes power losses during operation and enhances overall efficiency.
  6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed to be low, allowing for easy drive with standard logic levels.
  7. Switching Speed: The device features fast switching capabilities, which is essential for high-frequency applications, reducing switching losses and improving overall system performance.
  8. Thermal Performance: The QFN package provides excellent thermal performance, allowing for effective heat dissipation, which is critical in high-power applications.

Applications:

  • Power Management: Ideal for DC-DC converters, battery management systems, and power supplies.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Consumer Electronics: Used in devices requiring efficient power conversion and management.

Electrical Characteristics:

  • Input Capacitance (Ciss): The input capacitance is designed to be low, which helps in achieving faster switching times.
  • Output Capacitance (Coss): The output capacitance is also optimized for performance in high-frequency applications.
  • Reverse Recovery: The device exhibits minimal reverse recovery characteristics, making it suitable for synchronous rectification applications.

Conclusion:

The CSD17522Q5A from Texas Instruments is a versatile and efficient power MOSFET that meets the demands of modern electronic applications. Its combination of low on-resistance, high current handling capability, and fast switching performance makes it an excellent choice for engineers looking to optimize power efficiency in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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