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CSD17551Q3A

  • In Stock: 241103
  • Available: 267586

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $18.00000US $18.00
10+US $16.20000US $162.00
30+US $12.60000US $378.00
100+US $10.35000US $1035.00
500+US $9.90000US $4950.00
1000+US $9.00000US $9000.00

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD17551Q3A
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.3mm
  • Height
    900μm
  • Length
    3.3mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Rise Time
    24ns
  • Thickness
    800μm
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    1.6 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Terminal Form
    FLAT
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerVDFN
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    3.4 ns
  • Base Part Number
    CSD17551
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    2.6W
  • Terminal Position
    DUAL
  • Threshold Voltage
    1.6V
  • Additional Feature
    AVALANCHE RATED
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    8 ns
  • Vgs(th) (Max) @ Id
    2.1V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    12 ns
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    2.6W Ta
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    9m Ω @ 11A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    7.8nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    12A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1370pF @ 15V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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