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CSD17556Q5B

  • In Stock: 69463
  • Available: 86979

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.13210US $2.13
10+US $1.42140US $14.21
30+US $1.06605US $31.98
100+US $0.85284US $85.28
500+US $0.78177US $390.89
1000+US $0.71070US $710.70

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  • Description
  • Alternatives
  • Shopping Guide
Description

The CSD17556Q5B is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for applications requiring efficient power management and switching capabilities.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The CSD17556Q5B comes in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
  3. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of around 60V, making it suitable for a variety of power applications.
  4. Current Rating: The device can handle continuous drain currents of up to 50A, depending on the thermal conditions and PCB layout.
  5. R_DS(on): One of the standout features of the CSD17556Q5B is its low on-resistance (R_DS(on)), which is typically around 5.6 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
  6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, allowing for easy drive with low-voltage control signals.
  7. Switching Speed: The device is optimized for fast switching, making it ideal for applications such as synchronous rectification, DC-DC converters, and motor control.

Applications:

The CSD17556Q5B is widely used in various applications, including:

  • Power Management: Ideal for power supply circuits, where efficiency is critical.
  • DC-DC Converters: Suitable for buck, boost, and buck-boost converters due to its high efficiency and fast switching capabilities.
  • Motor Drives: Can be used in motor control applications, providing reliable switching performance.
  • Battery Management Systems: Effective in managing power distribution in battery-operated devices.

Thermal Characteristics:

The QFN package design aids in heat dissipation, allowing the MOSFET to operate at higher currents without overheating. Proper thermal management is essential to ensure the device operates within its specified limits.

Conclusion:

The CSD17556Q5B from Texas Instruments is a robust and efficient N-channel MOSFET that caters to a wide range of power applications. Its low on-resistance, high current handling capability, and fast switching speed make it a preferred choice for engineers looking to optimize power efficiency in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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