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CSD17559Q5

  • In Stock: 918941
  • Available: 78129

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.64000US $2.64
10+US $1.76000US $17.60
30+US $1.32000US $39.60
100+US $1.05600US $105.60
500+US $0.96800US $484.00
1000+US $0.88000US $880.00

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Description

CSD17559Q5 is a specific part number for a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for high-efficiency power management applications, particularly in switching power supplies and DC-DC converters.

Key Features:

  1. Type: N-channel MOSFET
  2. Voltage Rating: Typically, this MOSFET can handle a drain-source voltage (V_DS) of around 60V, making it suitable for various applications that require moderate voltage levels.
  3. Current Rating: It can support continuous drain current (I_D) ratings of up to 50A, depending on the thermal conditions and the specific application.
  4. R_DS(on): The on-resistance (R_DS(on)) is low, often in the range of a few milliohms, which helps minimize power loss during operation and improves overall efficiency.
  5. Package Type: The CSD17559Q5 is usually housed in a compact package, such as a DPAK or similar, which aids in thermal management and allows for easy integration into circuit designs.
  6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 3V, allowing for easy drive with standard logic levels.
  7. Switching Speed: This MOSFET is designed for fast switching applications, making it ideal for high-frequency operation in power converters.

Applications:

  • Power Supplies: Used in both AC-DC and DC-DC converters for efficient power conversion.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Battery Management Systems: Employed in systems that require efficient power distribution and management, such as in electric vehicles and renewable energy systems.

Thermal Characteristics:

  • The device is designed to handle significant thermal loads, with a thermal resistance junction-to-ambient (RθJA) that allows for effective heat dissipation when properly mounted on a PCB.
  • It may require additional heat sinking or thermal management strategies in high-power applications to maintain optimal operating temperatures.

Conclusion:

The CSD17559Q5 from Texas Instruments is a versatile and efficient power MOSFET that is well-suited for a variety of applications requiring reliable performance and high efficiency. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice among engineers designing power management solutions.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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