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CSD17571Q2

  • In Stock: 138000
  • Available: 538716

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.46800US $0.47
10+US $0.31200US $3.12
30+US $0.23400US $7.02
100+US $0.18720US $18.72
500+US $0.17160US $85.80
1000+US $0.15600US $156.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD17571Q2
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    2mm
  • Length
    2mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Rise Time
    19ns
  • Thickness
    750μm
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    NO LEAD
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    6-WDFN Exposed Pad
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    26 ns
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Base Part Number
    CSD17571
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    6 Weeks
  • Power Dissipation
    2.5W
  • Terminal Position
    DUAL
  • Additional Feature
    AVALANCHE RATED
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    5.3 ns
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Turn-Off Delay Time
    8 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    2.5W Ta
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    29m Ω @ 5A, 4.5V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    3.1nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    7.2 mJ
  • Continuous Drain Current (ID)
    22A
  • Peak Reflow Temperature (Cel)
    260
  • Drain-source On Resistance-Max
    0.029Ohm
  • Pulsed Drain Current-Max (IDM)
    39A
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    468pF @ 15V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    22A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e4
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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