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CSD17575Q3T

  • Available: 1500

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.80180US $1.80
10+US $1.20120US $12.01
30+US $0.90090US $27.03
100+US $0.72072US $72.07
500+US $0.66066US $330.33
1000+US $0.60060US $600.60

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD17575Q3T
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.3mm
  • Length
    3.3mm
  • Weight
    24.012046mg
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Rise Time
    10ns
  • Thickness
    1mm
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    NO LEAD
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerTDFN
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    3 ns
  • Base Part Number
    CSD17575
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    6 Weeks
  • Terminal Position
    DUAL
  • Threshold Voltage
    1.4V
  • Additional Feature
    AVALANCHE RATED
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    4 ns
  • Vgs(th) (Max) @ Id
    1.8V @ 250μA
  • Turn-Off Delay Time
    20 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    2.8W Ta 108W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    2.3m Ω @ 25A, 10V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    204 pF
  • DS Breakdown Voltage-Min
    30V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    27A
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    60A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    30V
  • Drain-source On Resistance-Max
    0.0032Ohm
  • Pulsed Drain Current-Max (IDM)
    240A
  • Input Capacitance (Ciss) (Max) @ Vds
    4420pF @ 15V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    60A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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