CSD17575Q3T
- Manufacturer's Part No.:CSD17575Q3T
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 30V 60A 8VSON
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 1500
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.80180 | US $1.80 |
10+ | US $1.20120 | US $12.01 |
30+ | US $0.90090 | US $27.03 |
100+ | US $0.72072 | US $72.07 |
500+ | US $0.66066 | US $330.33 |
1000+ | US $0.60060 | US $600.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD17575Q3T
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width3.3mm
- Length3.3mm
- Weight24.012046mg
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Rise Time10ns
- Thickness1mm
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormNO LEAD
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)3 ns
- Base Part NumberCSD17575
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time6 Weeks
- Terminal PositionDUAL
- Threshold Voltage1.4V
- Additional FeatureAVALANCHE RATED
- Number of Channels1
- Number of Elements1
- Turn On Delay Time4 ns
- Vgs(th) (Max) @ Id1.8V @ 250μA
- Turn-Off Delay Time20 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.8W Ta 108W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations5
- Rds On (Max) @ Id, Vgs2.3m Ω @ 25A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)204 pF
- DS Breakdown Voltage-Min30V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)27A
- Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)60A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)30V
- Drain-source On Resistance-Max0.0032Ohm
- Pulsed Drain Current-Max (IDM)240A
- Input Capacitance (Ciss) (Max) @ Vds4420pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C60A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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