CSD17576Q5BT
- Manufacturer's Part No.:CSD17576Q5BT
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- Series:NexFET™
- Description:MOSFET N-CH 30V 100A 8VSON
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- In Stock: 135216
- Available: 750
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.44320 | US $2.44 |
10+ | US $1.62880 | US $16.29 |
30+ | US $1.22160 | US $36.65 |
100+ | US $0.97728 | US $97.73 |
500+ | US $0.89584 | US $447.92 |
1000+ | US $0.81440 | US $814.40 |
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The CSD17576Q5BT is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This device is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-frequency switching applications.
Key Features:
- Type: N-channel MOSFET
- Package: The CSD17576Q5BT comes in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
- Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
- Current Rating: The device can handle continuous drain currents of up to 60A, depending on the thermal conditions and PCB layout.
- R_DS(on): The on-resistance (R_DS(on)) is very low, often in the range of a few milliohms, which minimizes power losses during operation and enhances overall efficiency.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed to be low, allowing for easy drive with standard logic levels.
- Switching Speed: The CSD17576Q5BT features fast switching capabilities, making it ideal for high-frequency applications where rapid turn-on and turn-off are critical.
- Thermal Performance: The QFN package provides excellent thermal performance, allowing for effective heat dissipation, which is crucial for maintaining reliability in high-power applications.
Applications:
- Power Management: Used in DC-DC converters, battery management systems, and power supplies.
- Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
- Consumer Electronics: Employed in devices requiring efficient power conversion and management.
Electrical Characteristics:
- Input Capacitance (Ciss): Typically low, which contributes to faster switching times.
- Output Capacitance (Coss): Designed to minimize losses during the switching process.
- Reverse Recovery Characteristics: Optimized for minimal reverse recovery charge, enhancing efficiency in switching applications.
Conclusion:
The CSD17576Q5BT from Texas Instruments is a versatile and efficient power MOSFET that meets the demands of modern electronic applications. Its combination of low on-resistance, high current handling capability, and compact packaging makes it an excellent choice for engineers looking to optimize power efficiency and thermal performance in their designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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