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CSD17577Q3AT

  • In Stock: 35250
  • Available: 184678

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.39562US $0.40
10+US $0.26374US $2.64
30+US $0.19781US $5.93
100+US $0.15825US $15.83
500+US $0.14506US $72.53
1000+US $0.13187US $131.87

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Description

The CSD17577Q3AT is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This device is designed for applications requiring efficient power management and switching capabilities.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The CSD17577Q3AT comes in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
  3. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
  4. Current Rating: The device can handle continuous drain current (I_D) of up to 60A, depending on the thermal conditions and PCB layout, which makes it ideal for high-current applications.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, often in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
  6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically low, allowing for easy drive with standard logic levels.
  7. Switching Speed: The CSD17577Q3AT features fast switching speeds, making it suitable for high-frequency applications such as DC-DC converters, motor drivers, and power management systems.

Applications:

  • Power Management: Ideal for use in power supplies, battery management systems, and energy-efficient converters.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Consumer Electronics: Can be used in devices requiring efficient power switching, such as laptops, smartphones, and other portable electronics.

Thermal Characteristics:

The QFN package design aids in heat dissipation, allowing the MOSFET to operate efficiently under high load conditions. Proper thermal management is crucial to ensure reliability and longevity in applications.

Conclusion:

The CSD17577Q3AT from Texas Instruments is a versatile and efficient N-channel MOSFET that meets the demands of modern electronic applications. Its combination of high current handling, low on-resistance, and compact packaging makes it a popular choice among engineers and designers looking to optimize power efficiency in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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