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CSD17579Q3A

  • In Stock: 322608
  • Available: 400347

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.62000US $3.62
10+US $3.25800US $32.58
30+US $2.53400US $76.02
100+US $2.08150US $208.15
500+US $1.99100US $995.50
1000+US $1.81000US $1810.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD17579Q3A
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Package / Case
    8-PowerVDFN
  • Part Status
    Active
  • Operating Temperature
    -55°C~150°C TJ
  • Factory Lead Time
    6 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Mount
    Surface Mount
  • Number of Pins
    8
  • Packaging
    Tape & Reel (TR)
  • Base Part Number
    CSD17579
  • Number of Terminations
    5
  • Terminal Finish
    Matte Tin (Sn)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Number of Elements
    1
  • Lead Free
    Lead Free
  • Pbfree Code
    yes
  • Additional Feature
    AVALANCHE RATED
  • Case Connection
    DRAIN
  • Contact Plating
    Copper, Tin
  • Length
    3.3mm
  • Width
    3.3mm
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    3.2W Ta 29W Tc
  • Thickness
    800μm
  • Turn On Delay Time
    2 ns
  • Turn-Off Delay Time
    11 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Drain Current-Max (Abs) (ID)
    11A
  • Drain-source On Resistance-Max
    0.0142Ohm
  • Pulsed Drain Current-Max (IDM)
    106A
  • DS Breakdown Voltage-Min
    30V
  • Avalanche Energy Rating (Eas)
    14 mJ
  • Drain to Source Voltage (Vdss)
    30V
  • Continuous Drain Current (ID)
    20A
  • Gate to Source Voltage (Vgs)
    20V
  • FET Type
    N-Channel
  • Vgs(th) (Max) @ Id
    1.9V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    998pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 10V
  • Vgs (Max)
    ±20V
  • Rise Time
    5ns
  • Fall Time (Typ)
    1 ns
  • Feedback Cap-Max (Crss)
    49 pF
  • Current - Continuous Drain (Id) @ 25°C
    20A Ta
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Rds On (Max) @ Id, Vgs
    10.2m Ω @ 8A, 10V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3

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