CSD17579Q3A
- Manufacturer's Part No.:CSD17579Q3A
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 30V 35A 8VSON
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 322608
- Available: 400347
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.62000 | US $3.62 |
10+ | US $3.25800 | US $32.58 |
30+ | US $2.53400 | US $76.02 |
100+ | US $2.08150 | US $208.15 |
500+ | US $1.99100 | US $995.50 |
1000+ | US $1.81000 | US $1810.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD17579Q3A
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Package / Case8-PowerVDFN
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time6 Weeks
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- MountSurface Mount
- Number of Pins8
- PackagingTape & Reel (TR)
- Base Part NumberCSD17579
- Number of Terminations5
- Terminal FinishMatte Tin (Sn)
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Number of Elements1
- Lead FreeLead Free
- Pbfree Codeyes
- Additional FeatureAVALANCHE RATED
- Case ConnectionDRAIN
- Contact PlatingCopper, Tin
- Length3.3mm
- Width3.3mm
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max3.2W Ta 29W Tc
- Thickness800μm
- Turn On Delay Time2 ns
- Turn-Off Delay Time11 ns
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)11A
- Drain-source On Resistance-Max0.0142Ohm
- Pulsed Drain Current-Max (IDM)106A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)14 mJ
- Drain to Source Voltage (Vdss)30V
- Continuous Drain Current (ID)20A
- Gate to Source Voltage (Vgs)20V
- FET TypeN-Channel
- Vgs(th) (Max) @ Id1.9V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds998pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
- Vgs (Max)±20V
- Rise Time5ns
- Fall Time (Typ)1 ns
- Feedback Cap-Max (Crss)49 pF
- Current - Continuous Drain (Id) @ 25°C20A Ta
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Rds On (Max) @ Id, Vgs10.2m Ω @ 8A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
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