CSD18503KCS
- Manufacturer's Part No.:CSD18503KCS
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- Series:NexFET™
- Description:MOSFET N-CH 40V 100A TO220-3
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- In Stock: 2000
- Available: 1015
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.48343 | US $2.48 |
10+ | US $1.65562 | US $16.56 |
30+ | US $1.24172 | US $37.25 |
100+ | US $0.99337 | US $99.34 |
500+ | US $0.91059 | US $455.30 |
1000+ | US $0.82781 | US $827.81 |
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- Description
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The CSD18503KCS is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for various applications, including power management, switching, and amplification in electronic circuits.
Key Features:
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Type and Configuration: The CSD18503KCS is an N-channel MOSFET, which means it conducts when a positive voltage is applied to the gate relative to the source. This configuration is ideal for high-efficiency switching applications.
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Voltage and Current Ratings: It typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications. The continuous drain current (I_D) rating can be up to 50A, allowing it to handle significant loads without overheating.
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On-Resistance (R_DS(on)): One of the standout features of the CSD18503KCS is its low on-resistance, often in the range of a few milliohms. This low R_DS(on) translates to reduced power loss and improved efficiency during operation, which is crucial for battery-powered devices and high-efficiency power supplies.
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Thermal Performance: The device is designed with a robust thermal management capability, often featuring a low thermal resistance junction-to-case (RθJC) rating. This allows for effective heat dissipation, enabling the MOSFET to operate at higher currents without reaching critical temperatures.
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Package Type: The CSD18503KCS is typically housed in a compact, surface-mount package, such as the DPAK or SOIC, which facilitates easy integration into printed circuit boards (PCBs) and helps save space in electronic designs.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is usually in the range of 1V to 2.5V, which means it can be driven by low-voltage control signals, making it compatible with various microcontrollers and digital logic levels.
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Applications: This MOSFET is widely used in applications such as DC-DC converters, motor drivers, power management systems, and other switching applications where efficiency and thermal performance are critical.
Summary:
The CSD18503KCS from Texas Instruments is a versatile and efficient N-channel MOSFET that excels in power management applications. Its low on-resistance, high current handling capability, and robust thermal performance make it an excellent choice for engineers looking to design reliable and efficient electronic systems. Whether used in consumer electronics, automotive applications, or industrial equipment, this MOSFET provides the performance and reliability needed for modern electronic designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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