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CSD18503Q5AT

  • In Stock: 120717
  • Available: 750

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.06200US $2.06
10+US $1.85580US $18.56
30+US $1.44340US $43.30
100+US $1.18565US $118.57
500+US $1.13410US $567.05
1000+US $1.03100US $1031.00

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  • Description
  • Alternatives
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Description

The CSD18503Q5AT is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-frequency switching applications.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The device is housed in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
  3. Voltage Rating: The CSD18503Q5AT typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
  4. Current Rating: It can handle continuous drain currents (I_D) of up to 50A, depending on the thermal conditions and PCB layout, which makes it capable of driving significant loads.
  5. R_DS(on): The on-resistance (R_DS(on)) is very low, often in the range of a few milliohms, which minimizes power losses during operation and enhances overall efficiency.
  6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically low, allowing for easy drive with standard logic-level signals.
  7. Switching Speed: The device is optimized for fast switching, which is crucial for applications that require high-frequency operation, such as DC-DC converters and synchronous rectification.

Applications:

  • Power Management: Ideal for use in power supplies, including buck converters and boost converters.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Battery Management Systems: Can be used in battery protection circuits and charging systems due to its efficient switching characteristics.

Thermal Performance:

The QFN package design aids in heat dissipation, allowing the CSD18503Q5AT to operate efficiently at higher currents without overheating. Proper thermal management techniques, such as using thermal vias and copper planes on the PCB, are recommended to maximize performance.

Conclusion:

The CSD18503Q5AT from Texas Instruments is a versatile and efficient power MOSFET that is well-suited for a variety of applications requiring reliable power management and high efficiency. Its low on-resistance, high current handling capability, and fast switching speed make it an excellent choice for modern electronic designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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