CSD18504Q5A
- Manufacturer's Part No.:CSD18504Q5A
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 40V 8SON
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 40000
- Available: 223949
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.09188 | US $1.09 |
10+ | US $0.72792 | US $7.28 |
30+ | US $0.54594 | US $16.38 |
100+ | US $0.43675 | US $43.68 |
500+ | US $0.40036 | US $200.18 |
1000+ | US $0.36396 | US $363.96 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD18504Q5A
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width6mm
- Height1.1mm
- Length4.9mm
- FET TypeN-Channel
- PackagingCut Tape (CT)
- Rise Time6.8ns
- Thickness1mm
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Powers
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)2 ns
- Base Part NumberCSD18504
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time8 Weeks
- Power Dissipation3.1W
- Terminal PositionDUAL
- Threshold Voltage1.9V
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Channels1
- Number of Elements1
- Turn On Delay Time3.2 ns
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time12 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max3.1W Ta 77W Tc
- Number of Terminations5
- Rds On (Max) @ Id, Vgs6.6m Ω @ 17A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)9.6 pF
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)50A
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)92 mJ
- Continuous Drain Current (ID)15A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)275A
- Drain to Source Breakdown Voltage40V
- Input Capacitance (Ciss) (Max) @ Vds1656pF @ 20V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C15A Ta 50A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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