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CSD18511Q5A

  • In Stock: 7500
  • Available: 166659

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.78794US $1.79
10+US $1.19196US $11.92
30+US $0.89397US $26.82
100+US $0.71518US $71.52
500+US $0.65558US $327.79
1000+US $0.59598US $595.98

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Description

The CSD18511Q5A is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-frequency switching applications.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The CSD18511Q5A comes in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
  3. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
  4. Current Rating: The device can handle continuous drain currents of up to 50A, depending on the thermal conditions and PCB layout.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, often in the range of a few milliohms, which contributes to reduced power losses during operation and improved efficiency.
  6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed to be low, allowing for easy drive with standard logic levels.
  7. Switching Speed: The CSD18511Q5A features fast switching capabilities, which is essential for high-frequency applications, minimizing switching losses and improving overall efficiency.
  8. Thermal Performance: The QFN package provides excellent thermal performance, allowing for effective heat dissipation, which is critical in high-power applications.

Applications:

  • DC-DC Converters: Ideal for use in synchronous rectification and other power conversion applications.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Power Management: Used in power management circuits for consumer electronics, telecommunications, and computing devices.

Electrical Characteristics:

  • Input Capacitance (C_iss): Typically low, which helps in reducing the drive power required for switching.
  • Output Capacitance (C_oss): Also low, contributing to faster switching times.
  • Reverse Recovery: The device is designed to minimize reverse recovery losses, making it suitable for applications where reverse recovery can be a concern.

Conclusion:

The CSD18511Q5A from Texas Instruments is a versatile and efficient power MOSFET that meets the demands of modern electronic applications. Its combination of low on-resistance, high current handling capability, and fast switching performance makes it an excellent choice for engineers looking to optimize power efficiency in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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