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CSD18533Q5A

  • In Stock: 341308
  • Available: 160441

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.41450US $1.41
10+US $0.94300US $9.43
30+US $0.70725US $21.22
100+US $0.56580US $56.58
500+US $0.51865US $259.33
1000+US $0.47150US $471.50

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Description

The CSD18533Q5A is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-frequency switching applications.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The CSD18533Q5A is housed in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
  3. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
  4. Current Rating: The device can handle continuous drain currents of up to 60A, depending on the thermal conditions and PCB layout.
  5. R_DS(on): The on-resistance (R_DS(on)) is very low, often in the range of a few milliohms, which minimizes power losses during operation and enhances efficiency.
  6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed to be low, allowing for easy drive with standard logic levels.
  7. Switching Speed: The CSD18533Q5A features fast switching capabilities, making it ideal for high-frequency applications. Its low gate charge (Q_g) contributes to reduced switching losses.
  8. Thermal Performance: The QFN package provides excellent thermal performance, allowing for effective heat dissipation, which is critical in high-power applications.

Applications:

  • DC-DC Converters: Used in step-down (buck) converters for efficient voltage regulation.
  • Power Management: Ideal for power management ICs in consumer electronics, automotive, and industrial applications.
  • Motor Control: Suitable for driving motors in various applications, including robotics and automation.
  • Battery Management Systems: Utilized in systems that require efficient power distribution and management.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): Typically rated at ±20V.
  • Body Diode Characteristics: The device features a built-in body diode, which provides reverse conduction capabilities and is rated for certain reverse recovery characteristics.

Conclusion:

The CSD18533Q5A from Texas Instruments is a versatile and efficient power MOSFET that meets the demands of modern electronic applications. Its combination of low on-resistance, high current handling, and fast switching speeds makes it an excellent choice for engineers looking to optimize power efficiency in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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