CSD18536KCS
- Manufacturer's Part No.:CSD18536KCS
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 60V 200A TO-220-3
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 1460
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $7.78000 | US $7.78 |
10+ | US $7.00200 | US $70.02 |
30+ | US $5.44600 | US $163.38 |
100+ | US $4.47350 | US $447.35 |
500+ | US $4.27900 | US $2139.50 |
1000+ | US $3.89000 | US $3890.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD18536KCS
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountThrough Hole
- Width8.7mm
- Height4.7mm
- Length10.16mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTube
- Pin Count3
- Rise Time17ns
- Thickness4.58mm
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Contact PlatingCopper, Tin
- Fall Time (Typ)12 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberCSD18536
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time12 Weeks
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Turn On Delay Time8 ns
- Vgs(th) (Max) @ Id2.2V @ 250μA
- Turn-Off Delay Time23 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max375W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations3
- Rds On (Max) @ Id, Vgs1.6m Ω @ 100A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)51 pF
- DS Breakdown Voltage-Min60V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs108nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)819 mJ
- Continuous Drain Current (ID)200A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)60V
- Drain-source On Resistance-Max0.0022Ohm
- Pulsed Drain Current-Max (IDM)400A
- Input Capacitance (Ciss) (Max) @ Vds11430pF @ 30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C200A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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