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CSD18536KCS

  • Available: 1460

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $7.78000US $7.78
10+US $7.00200US $70.02
30+US $5.44600US $163.38
100+US $4.47350US $447.35
500+US $4.27900US $2139.50
1000+US $3.89000US $3890.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD18536KCS
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    8.7mm
  • Height
    4.7mm
  • Length
    10.16mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tube
  • Pin Count
    3
  • Rise Time
    17ns
  • Thickness
    4.58mm
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-220-3
  • Case Connection
    DRAIN
  • Contact Plating
    Copper, Tin
  • Fall Time (Typ)
    12 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    CSD18536
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    12 Weeks
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    1
  • Turn On Delay Time
    8 ns
  • Vgs(th) (Max) @ Id
    2.2V @ 250μA
  • Turn-Off Delay Time
    23 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    375W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    1.6m Ω @ 100A, 10V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    51 pF
  • DS Breakdown Voltage-Min
    60V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    108nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    819 mJ
  • Continuous Drain Current (ID)
    200A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    60V
  • Drain-source On Resistance-Max
    0.0022Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • Input Capacitance (Ciss) (Max) @ Vds
    11430pF @ 30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    200A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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