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CSD18540Q5BT

  • In Stock: 5759
  • Available: 56270

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.00000US $4.00
10+US $3.60000US $36.00
30+US $2.80000US $84.00
100+US $2.30000US $230.00
500+US $2.20000US $1100.00
1000+US $2.00000US $2000.00

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD18540Q5BT
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6mm
  • Height
    1.05mm
  • Length
    5mm
  • Weight
    24.012046mg
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Rise Time
    9ns
  • Thickness
    950μm
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    NO LEAD
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerTDFN
  • Case Connection
    DRAIN
  • Contact Plating
    Gold
  • Fall Time (Typ)
    3 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    CSD18540
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    6 Weeks
  • Power Dissipation
    3.8W
  • Terminal Position
    DUAL
  • Threshold Voltage
    1.9V
  • Additional Feature
    AVALANCHE RATED
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    6 ns
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Turn-Off Delay Time
    20 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    3.1W Ta 195W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    2.2m Ω @ 28A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    60V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    53nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    320 mJ
  • Continuous Drain Current (ID)
    29A
  • Max Junction Temperature (Tj)
    175°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    60V
  • Drain-source On Resistance-Max
    0.0033Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • Input Capacitance (Ciss) (Max) @ Vds
    4230pF @ 30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    100A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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