CSD18543Q3A
- Manufacturer's Part No.:CSD18543Q3A
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- Description:60V N CH MOSFET
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- In Stock: 286267
- Available: 46000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.64680 | US $0.65 |
10+ | US $0.43120 | US $4.31 |
30+ | US $0.32340 | US $9.70 |
100+ | US $0.25872 | US $25.87 |
500+ | US $0.23716 | US $118.58 |
1000+ | US $0.21560 | US $215.60 |
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The CSD18543Q3A is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This device is designed for applications requiring efficient power management, such as in power supplies, motor drivers, and other high-frequency switching applications.
Key Features:
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Type and Configuration: The CSD18543Q3A is a N-channel MOSFET, which means it uses electrons as charge carriers. This type of configuration is known for its high efficiency and fast switching capabilities.
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Voltage and Current Ratings: It typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications. The continuous drain current (I_D) rating can be up to 60A, depending on the thermal management and conditions of use.
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R_DS(on): One of the standout features of this MOSFET is its low on-resistance (R_DS(on)), which is usually in the range of a few milliohms. This low resistance minimizes power loss during operation, enhancing overall efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically low, allowing for easy drive with standard logic levels. This feature is crucial for applications where rapid switching is required.
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Package Type: The CSD18543Q3A is often housed in a compact, thermally efficient package, such as a DPAK or similar surface-mount package. This design facilitates better heat dissipation and allows for high-density circuit layouts.
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Thermal Performance: With a robust thermal resistance rating, the CSD18543Q3A can handle significant power dissipation, making it suitable for high-load applications. Proper thermal management is essential to maintain performance and reliability.
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Applications: This MOSFET is ideal for a variety of applications, including DC-DC converters, synchronous rectification, and power management in consumer electronics, automotive systems, and industrial equipment.
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Switching Speed: The device is designed for high-speed switching, which is critical in applications where efficiency and response time are paramount. Its fast turn-on and turn-off characteristics help reduce switching losses.
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Reliability: Texas Instruments is known for its commitment to quality and reliability, and the CSD18543Q3A is no exception. It undergoes rigorous testing to ensure it meets industry standards for performance and durability.
In summary, the CSD18543Q3A from Texas Instruments is a versatile and efficient N-channel MOSFET that excels in power management applications. Its combination of low on-resistance, high current handling, and fast switching capabilities makes it a popular choice among engineers and designers looking to optimize their electronic systems.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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