CSD19502Q5B
- Manufacturer's Part No.:CSD19502Q5B
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 80V 100A 8SON
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 47754
- Available: 85313
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.00880 | US $2.01 |
10+ | US $1.80792 | US $18.08 |
30+ | US $1.40616 | US $42.18 |
100+ | US $1.15506 | US $115.51 |
500+ | US $1.10484 | US $552.42 |
1000+ | US $1.00440 | US $1004.40 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD19502Q5B
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width6mm
- Length5mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Rise Time6ns
- Thickness950μm
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormNO LEAD
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Fall Time (Typ)7 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberCSD19502
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- Power Dissipation3.2W
- Terminal PositionDUAL
- Threshold Voltage2.7V
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Channels1
- Number of Elements1
- Turn On Delay Time8 ns
- Vgs(th) (Max) @ Id3.3V @ 250μA
- Turn-Off Delay Time22 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max3.1W Ta 195W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations5
- Rds On (Max) @ Id, Vgs4.1m Ω @ 19A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)22 pF
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)274 mJ
- Continuous Drain Current (ID)100A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)400A
- Drain to Source Breakdown Voltage80V
- Input Capacitance (Ciss) (Max) @ Vds4870pF @ 40V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Current - Continuous Drain (Id) @ 25°C100A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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