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CSD19506KCS

  • Available: 4214

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $5.19596US $5.20
10+US $4.67636US $46.76
30+US $3.63717US $109.12
100+US $2.98768US $298.77
500+US $2.85778US $1428.89
1000+US $2.59798US $2597.98

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD19506KCS
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    8.7mm
  • Height
    4.7mm
  • Length
    10.16mm
  • Weight
    6.000006g
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    3
  • Rise Time
    11ns
  • Thickness
    4.58mm
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-220-3
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    10 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    CSD19506
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    6 Weeks
  • Threshold Voltage
    2.5V
  • Additional Feature
    AVALANCHE RATED
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    19 ns
  • Vgs(th) (Max) @ Id
    3.2V @ 250μA
  • Turn-Off Delay Time
    30 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    375W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    2.3m Ω @ 100A, 10V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    55 pF
  • DS Breakdown Voltage-Min
    80V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    156nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    273A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    80V
  • Drain-source On Resistance-Max
    0.0028Ohm
  • Input Capacitance (Ciss) (Max) @ Vds
    12200pF @ 40V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Current - Continuous Drain (Id) @ 25°C
    100A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    Not Applicable

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