CSD19531KCS
- Manufacturer's Part No.:CSD19531KCS
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 100V 100A TO220-3
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 1694
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.05756 | US $2.06 |
10+ | US $1.85180 | US $18.52 |
30+ | US $1.44029 | US $43.21 |
100+ | US $1.18310 | US $118.31 |
500+ | US $1.13166 | US $565.83 |
1000+ | US $1.02878 | US $1028.78 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD19531KCS
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountThrough Hole
- Width8.7mm
- Height4.7mm
- Length10.16mm
- Weight6.000006g
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Rise Time7.2ns
- Thickness4.58mm
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)4.1 ns
- Base Part NumberCSD19531
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- Power Dissipation179W
- Threshold Voltage2.7V
- Additional FeatureAVALANCHE RATED
- Number of Channels1
- Number of Elements1
- Turn On Delay Time8.4 ns
- Vgs(th) (Max) @ Id3.3V @ 250μA
- Turn-Off Delay Time16 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max214W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations3
- Rds On (Max) @ Id, Vgs7.7m Ω @ 60A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)105A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)100V
- Drain-source On Resistance-Max0.0088Ohm
- Pulsed Drain Current-Max (IDM)285A
- Input Capacitance (Ciss) (Max) @ Vds3870pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Current - Continuous Drain (Id) @ 25°C100A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)Not Applicable
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