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CSD19531Q5AT

  • In Stock: 47537
  • Available: 78115

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.62000US $4.62
10+US $4.15800US $41.58
30+US $3.23400US $97.02
100+US $2.65650US $265.65
500+US $2.54100US $1270.50
1000+US $2.31000US $2310.00

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Description

The CSD19531Q5AT is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-frequency switching applications.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The device typically comes in a compact, thermally efficient package, such as a QFN (Quad Flat No-lead) or similar, which allows for effective heat dissipation and space-saving on PCBs (Printed Circuit Boards).
  3. Voltage Rating: The CSD19531Q5AT has a high breakdown voltage, typically around 30V, making it suitable for various applications that require robust voltage handling.
  4. Current Rating: It can handle significant continuous drain current, often in the range of 50A or more, depending on the thermal conditions and PCB layout.
  5. RDS(on): The on-resistance (RDS(on)) is low, which minimizes power loss during operation and enhances efficiency. This is a critical parameter for applications where heat generation and energy efficiency are concerns.
  6. Gate Threshold Voltage: The gate threshold voltage is designed to be low, allowing for easy drive with standard logic levels, which is beneficial for interfacing with microcontrollers and digital logic circuits.
  7. Switching Speed: The device features fast switching capabilities, making it suitable for high-frequency applications. This is important for reducing switching losses in power conversion circuits.
  8. Thermal Performance: The package design and materials used in the CSD19531Q5AT contribute to excellent thermal performance, allowing it to operate efficiently under high load conditions.

Applications:

  • Power Management: Ideal for DC-DC converters, battery management systems, and power distribution.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Consumer Electronics: Used in power supplies for laptops, desktops, and other electronic devices.
  • Renewable Energy: Can be utilized in solar inverters and other renewable energy systems for efficient power conversion.

Summary:

The CSD19531Q5AT from Texas Instruments is a versatile and efficient N-channel MOSFET that excels in high-performance applications requiring reliable power management and thermal efficiency. Its combination of low on-resistance, high current handling, and fast switching capabilities makes it a preferred choice for engineers designing modern electronic systems.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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