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CSD19532KTT

  • In Stock: 1000
  • Available: 66715

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.14000US $2.14
10+US $1.92600US $19.26
30+US $1.49800US $44.94
100+US $1.23050US $123.05
500+US $1.17700US $588.50
1000+US $1.07000US $1070.00

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Description

CSD19532KTT is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for high-efficiency applications, particularly in power management and switching circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Voltage Rating: Typically, it has a high breakdown voltage, often around 30V, making it suitable for various applications where voltage levels can fluctuate.
  3. Current Rating: The device can handle significant current levels, often rated at around 50A, which allows it to be used in high-power applications.
  4. RDS(on): The on-resistance is low, usually in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
  5. Package Type: It is commonly available in a TO-220 or similar package, which provides good thermal performance and ease of mounting on PCBs (Printed Circuit Boards).
  6. Gate Threshold Voltage: The gate threshold voltage is typically low, allowing for easy drive with standard logic levels.
  7. Switching Speed: The device is designed for fast switching, making it ideal for applications such as DC-DC converters, motor drivers, and other power management systems.

Applications:

  • Power Supply Circuits: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Battery Management Systems: Employed in systems that require efficient power distribution and management, such as in electric vehicles and renewable energy systems.
  • Consumer Electronics: Found in devices that require compact and efficient power management solutions.

Performance Characteristics:

  • Thermal Resistance: The device typically has a low thermal resistance, allowing it to dissipate heat effectively, which is crucial for maintaining performance and reliability in high-power applications.
  • Safe Operating Area (SOA): The CSD19532KTT is designed to operate within a specified safe operating area, ensuring reliability under various load conditions.

Conclusion:

The CSD19532KTT from Texas Instruments is a robust and efficient power MOSFET that is well-suited for a wide range of applications requiring high efficiency and reliability. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice among engineers and designers in the power electronics field.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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