CSD19534Q5A
- Manufacturer's Part No.:CSD19534Q5A
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 100V 50 8SON
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 28684
- Available: 58950
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.85068 | US $0.85 |
10+ | US $0.56712 | US $5.67 |
30+ | US $0.42534 | US $12.76 |
100+ | US $0.34027 | US $34.03 |
500+ | US $0.31192 | US $155.96 |
1000+ | US $0.28356 | US $283.56 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD19534Q5A
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width6mm
- Height1.1mm
- Length4.9mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Rise Time14ns
- Thickness1mm
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormNO LEAD
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerTDFN
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)6 ns
- Base Part NumberCSD19534
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- Power Dissipation3.2W
- Terminal PositionDUAL
- Additional FeatureAVALANCHE RATED
- Number of Channels1
- Number of Elements1
- Turn On Delay Time9 ns
- Vgs(th) (Max) @ Id3.4V @ 250μA
- Turn-Off Delay Time20 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max3.2W Ta 63W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations5
- Rds On (Max) @ Id, Vgs15.1m Ω @ 10A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)7.4 pF
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)55 mJ
- Continuous Drain Current (ID)10A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds1680pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Current - Continuous Drain (Id) @ 25°C50A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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