CSD19535KTT

CSD19535KTT is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Texas Instruments, a well-known semiconductor manufacturer based in Texas. This component is designed for high-efficiency power management applications, making it suitable for various electronic devices and systems.

Key Features:

1. Type: N-channel MOSFET

   • This type of MOSFET allows current to flow when a positive voltage is applied to the gate terminal, making it ideal for switching applications.

2. Voltage Rating:

   • The CSD19535KTT typically has a high breakdown voltage, often around 30V, which allows it to handle significant voltage levels without failing.

3. Current Rating:

   • It can handle a continuous drain current of up to 50A, making it suitable for applications that require substantial power handling.

4. RDS(on):

   • The on-resistance (RDS(on)) is low, often in the range of a few milliohms, which minimizes power loss and heat generation during operation. This feature is crucial for improving the efficiency of power circuits.

5. Package Type:

   • The CSD19535KTT is typically housed in a compact, thermally efficient package, such as a DPAK or similar, which aids in heat dissipation and allows for easier integration into circuit boards.

6. Thermal Performance:

   • Designed with thermal management in mind, it can operate at elevated temperatures, making it suitable for demanding environments.

7. Applications:

   • Commonly used in power supply circuits, motor drivers, and other applications where efficient switching and power management are critical.

Physical Characteristics:

• Dimensions: The package dimensions are compact, allowing for high-density circuit designs.
• Lead Configuration: The leads are typically arranged to facilitate easy soldering onto printed circuit boards (PCBs).

Performance Characteristics:

• Switching Speed: The CSD19535KTT is designed for fast switching, which is essential for applications like DC-DC converters and inverters.
• Gate Charge: It has a low gate charge, which means it requires less energy to switch on and off, contributing to overall system efficiency.

Conclusion:

The CSD19535KTT from Texas Instruments is a robust and efficient power MOSFET that is well-suited for a variety of high-performance applications. Its combination of high current handling, low on-resistance, and excellent thermal performance makes it a popular choice among engineers designing power management solutions.