CSD19536KTTT
- Manufacturer's Part No.:CSD19536KTTT
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 100V 200A TO263
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 26570
- Available: 21344
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $6.20000 | US $6.20 |
10+ | US $5.58000 | US $55.80 |
30+ | US $4.34000 | US $130.20 |
100+ | US $3.56500 | US $356.50 |
500+ | US $3.41000 | US $1705.00 |
1000+ | US $3.10000 | US $3100.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD19536KTTT
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width8.41mm
- Height4.83mm
- Length10.18mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Rise Time8ns
- Thickness4.44mm
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)6 ns
- Base Part NumberCSD19536
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Turn On Delay Time13 ns
- Vgs(th) (Max) @ Id3.2V @ 250μA
- Turn-Off Delay Time32 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max375W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations2
- Rds On (Max) @ Id, Vgs2.4m Ω @ 100A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)61 pF
- DS Breakdown Voltage-Min100V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs153nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)806 mJ
- Continuous Drain Current (ID)200A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)100V
- Drain-source On Resistance-Max0.0028Ohm
- Pulsed Drain Current-Max (IDM)400A
- Input Capacitance (Ciss) (Max) @ Vds12000pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Current - Continuous Drain (Id) @ 25°C200A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)2 (1 Year)
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