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CSD19536KTT

  • In Stock: 101568
  • Available: 32303

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.10200US $3.10
10+US $2.79180US $27.92
30+US $2.17140US $65.14
100+US $1.78365US $178.37
500+US $1.70610US $853.05
1000+US $1.55100US $1551.00

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD19536KTT
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    8.41mm
  • Height
    4.83mm
  • Length
    10.18mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Rise Time
    8ns
  • Thickness
    4.44mm
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    6 ns
  • Base Part Number
    CSD19536
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    6 Weeks
  • Power Dissipation
    375W
  • Additional Feature
    AVALANCHE RATED
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    13 ns
  • Vgs(th) (Max) @ Id
    3.2V @ 250μA
  • Turn-Off Delay Time
    32 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    375W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    2.4m Ω @ 100A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    153nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    806 mJ
  • Continuous Drain Current (ID)
    200A
  • Max Junction Temperature (Tj)
    175°C
  • Peak Reflow Temperature (Cel)
    260
  • Drain-source On Resistance-Max
    0.0028Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance (Ciss) (Max) @ Vds
    12000pF @ 50V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Current - Continuous Drain (Id) @ 25°C
    200A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    2 (1 Year)

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