CSD19537Q3T
- Manufacturer's Part No.:CSD19537Q3T
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET N-CH 100V 50A 8VSON
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 1503245
- Available: 111531
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.10000 | US $3.10 |
10+ | US $2.79000 | US $27.90 |
30+ | US $2.17000 | US $65.10 |
100+ | US $1.78250 | US $178.25 |
500+ | US $1.70500 | US $852.50 |
1000+ | US $1.55000 | US $1550.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD19537Q3T
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width3.3mm
- Length3.3mm
- FET TypeN-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Rise Time3ns
- Thickness1mm
- Vgs (Max)±20V
- Resistance12.1mOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormNO LEAD
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerVDFN
- Case ConnectionDRAIN
- Contact PlatingCopper, Tin
- Fall Time (Typ)3 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberCSD19537
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time6 Weeks
- Terminal PositionDUAL
- Threshold Voltage3V
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Turn On Delay Time5 ns
- Vgs(th) (Max) @ Id3.6V @ 250μA
- Turn-Off Delay Time10 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max2.8W Ta 83W Tc
- Reach Compliance Codenot_compliant
- Number of Terminations5
- Rds On (Max) @ Id, Vgs14.5m Ω @ 10A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)17.3 pF
- DS Breakdown Voltage-Min100V
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)9.7A
- Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)55 mJ
- Continuous Drain Current (ID)50A
- Drain to Source Voltage (Vdss)100V
- Pulsed Drain Current-Max (IDM)219A
- Input Capacitance (Ciss) (Max) @ Vds1680pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Current - Continuous Drain (Id) @ 25°C50A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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