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CSD19537Q3T

  • In Stock: 1500130
  • Available: 111531

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.10000US $3.10
10+US $2.79000US $27.90
30+US $2.17000US $65.10
100+US $1.78250US $178.25
500+US $1.70500US $852.50
1000+US $1.55000US $1550.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD19537Q3T
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.3mm
  • Length
    3.3mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Rise Time
    3ns
  • Thickness
    1mm
  • Vgs (Max)
    ±20V
  • Resistance
    12.1mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Terminal Form
    NO LEAD
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerVDFN
  • Case Connection
    DRAIN
  • Contact Plating
    Copper, Tin
  • Fall Time (Typ)
    3 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    CSD19537
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    6 Weeks
  • Terminal Position
    DUAL
  • Threshold Voltage
    3V
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    1
  • Turn On Delay Time
    5 ns
  • Vgs(th) (Max) @ Id
    3.6V @ 250μA
  • Turn-Off Delay Time
    10 ns
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    2.8W Ta 83W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    14.5m Ω @ 10A, 10V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    17.3 pF
  • DS Breakdown Voltage-Min
    100V
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    9.7A
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    55 mJ
  • Continuous Drain Current (ID)
    50A
  • Drain to Source Voltage (Vdss)
    100V
  • Pulsed Drain Current-Max (IDM)
    219A
  • Input Capacitance (Ciss) (Max) @ Vds
    1680pF @ 50V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Current - Continuous Drain (Id) @ 25°C
    50A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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