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CSD19537Q3

  • In Stock: 291722
  • Available: 185043

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.94050US $0.94
10+US $0.62700US $6.27
30+US $0.47025US $14.11
100+US $0.37620US $37.62
500+US $0.34485US $172.42
1000+US $0.31350US $313.50

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD19537Q3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.3mm
  • Height
    1.1mm
  • Length
    3.3mm
  • FET Type
    N-Channel
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Rise Time
    3ns
  • Thickness
    1mm
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Terminal Form
    NO LEAD
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerVDFN
  • Case Connection
    DRAIN
  • Contact Plating
    Copper, Tin
  • Fall Time (Typ)
    3 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    CSD19537
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    6 Weeks
  • Power Dissipation
    2.8W
  • Terminal Position
    DUAL
  • Threshold Voltage
    3V
  • Additional Feature
    AVALANCHE RATED
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    5 ns
  • Vgs(th) (Max) @ Id
    3.6V @ 250μA
  • Turn-Off Delay Time
    10 ns
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    2.8W Ta 83W Tc
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    5
  • Rds On (Max) @ Id, Vgs
    14.5m Ω @ 10A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    55 mJ
  • Continuous Drain Current (ID)
    9.7A
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance (Ciss) (Max) @ Vds
    1680pF @ 50V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Current - Continuous Drain (Id) @ 25°C
    50A Ta

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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