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CSD23203W

  • In Stock: 114033
  • Available: 3000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.49980US $0.50
10+US $0.33320US $3.33
30+US $0.24990US $7.50
100+US $0.19992US $19.99
500+US $0.18326US $91.63
1000+US $0.16660US $166.60

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Description

The CSD23203W is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for high-efficiency power management applications, particularly in the realm of switching power supplies and DC-DC converters.

Key Features:

  1. Type: N-channel MOSFET
  2. Voltage Rating: The CSD23203W typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
  3. Current Rating: It can handle continuous drain current (I_D) of approximately 60A, which allows it to manage significant power loads effectively.
  4. R_DS(on): The on-resistance (R_DS(on)) is low, often in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
  5. Package Type: The device is usually housed in a compact, thermally efficient package, such as a DPAK or similar, which aids in heat dissipation and allows for easier integration into circuit designs.
  6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically low, enabling the MOSFET to turn on quickly and efficiently with minimal gate drive voltage.
  7. Switching Speed: The CSD23203W is designed for fast switching applications, which is crucial for high-frequency operation in power converters.

Applications:

  • Power Management: Ideal for use in power supplies, battery management systems, and other applications requiring efficient power conversion.
  • Motor Control: Can be utilized in motor driver circuits where rapid switching and high current handling are necessary.
  • LED Drivers: Suitable for driving LED arrays where precise control of current and voltage is required.

Performance Characteristics:

  • Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with thermal resistance specifications that ensure reliable performance under load.
  • Robustness: Built to withstand transient conditions, making it suitable for applications where voltage spikes may occur.

Conclusion:

The CSD23203W from Texas Instruments is a versatile and efficient power MOSFET that caters to a wide range of applications in power management and control. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a preferred choice for engineers looking to optimize their designs for performance and efficiency.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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