CSD23382F4T
- Manufacturer's Part No.:CSD23382F4T
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- Series:FemtoFET™
- Description:MOSFET P-CH 12V 3.5A 3PICOSTAR
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- In Stock: 200000
- Available: 6000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.28560 | US $0.29 |
10+ | US $0.19040 | US $1.90 |
30+ | US $0.14280 | US $4.28 |
100+ | US $0.11424 | US $11.42 |
500+ | US $0.10472 | US $52.36 |
1000+ | US $0.09520 | US $95.20 |
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- Description
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The CSD23382F4T is a specific type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for high-efficiency power management applications, making it suitable for a variety of electronic devices and systems.
Key Features:
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Type: N-channel MOSFET
- The CSD23382F4T is an N-channel device, which means it conducts when a positive voltage is applied to the gate relative to the source.
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Voltage Rating:
- It typically has a maximum drain-source voltage (V_DS) rating of around 30V, allowing it to handle moderate voltage applications effectively.
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Current Rating:
- The device can handle continuous drain current (I_D) ratings of up to 60A, making it suitable for high-current applications.
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R_DS(on):
- The on-resistance (R_DS(on)) is low, often in the range of a few milliohms, which minimizes power loss and heat generation during operation. This feature is crucial for improving the efficiency of power circuits.
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Package Type:
- The CSD23382F4T is typically housed in a compact, surface-mount package, such as a DPAK or similar, which facilitates easy integration into printed circuit boards (PCBs) and helps save space in electronic designs.
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Thermal Performance:
- The device is designed to operate efficiently at elevated temperatures, with a specified maximum junction temperature (T_J) that allows for reliable performance in demanding environments.
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Switching Speed:
- It features fast switching capabilities, making it ideal for applications such as DC-DC converters, motor drivers, and power management systems where rapid on/off switching is required.
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Gate Threshold Voltage:
- The gate threshold voltage (V_GS(th)) is typically low, allowing the MOSFET to turn on with a relatively low gate voltage, which is beneficial for interfacing with low-voltage control signals.
Applications:
The CSD23382F4T is commonly used in various applications, including:
- Power Supply Circuits: For efficient voltage regulation and power conversion.
- Battery Management Systems: To control charging and discharging processes.
- Motor Control: In applications requiring precise control of motor speed and torque.
- LED Drivers: For efficient control of LED lighting systems.
Conclusion:
Overall, the CSD23382F4T from Texas Instruments is a versatile and efficient power MOSFET that is well-suited for a range of high-performance electronic applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice among engineers and designers looking to optimize power management in their circuits.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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