CSD25501F3T

The CSD25501F3T is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It is designed for high-efficiency applications, particularly in power management and conversion systems.

Key Features:

1. Type: N-channel MOSFET

2. Package: The device typically comes in a compact, surface-mount package, which allows for efficient thermal management and space-saving designs. The specific package type is often a DPAK or similar, facilitating easy integration into various circuit layouts.

3. Voltage Rating: The CSD25501F3T has a maximum drain-source voltage (V_DS) rating of around 50V, making it suitable for a wide range of applications, including DC-DC converters and motor drivers.

4. Current Rating: It can handle continuous drain current (I_D) of up to 30A, depending on the thermal conditions and the PCB layout, which allows it to be used in high-current applications.

5. R_DS(on): One of the standout features of this MOSFET is its low on-resistance (R_DS(on)), typically in the range of a few milliohms. This characteristic minimizes power loss during operation, enhancing overall efficiency.

6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is relatively low, allowing for easy drive with standard logic levels. This feature is crucial for applications where rapid switching is required.

7. Switching Speed: The CSD25501F3T is designed for fast switching, which is essential in applications like synchronous rectification and high-frequency converters. Its low gate charge (Q_g) contributes to reduced switching losses.

8. Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a specified maximum junction temperature (T_j) of up to 150°C. This makes it suitable for demanding environments.

9. Applications: Common applications include power supplies, battery management systems, motor control, and other power conversion applications where efficiency and thermal performance are critical.

Electrical Characteristics:

• V_DS: 50V
• I_D: 30A (continuous)
• R_DS(on): Typically around 5-10 mΩ
• V_GS(th): Approximately 1-2V
• Q_g: Low gate charge for fast switching

Conclusion:

The CSD25501F3T from Texas Instruments is a versatile and efficient power MOSFET that is well-suited for a variety of high-performance applications. Its combination of low on-resistance, high current handling capability, and fast switching speeds makes it an excellent choice for engineers looking to optimize power management solutions in their designs.