Image is for your reference only, please check specifications for details
iconCompare
icon

CSD25501F3T

  • In Stock: 6665
  • Available: 11750

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.56556US $0.57
10+US $0.37704US $3.77
30+US $0.28278US $8.48
100+US $0.22622US $22.62
500+US $0.20737US $103.69
1000+US $0.18852US $188.52

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ
  • esd
  • as
  • iso14001
  • iso9001
  • D&B
  • Description
  • Alternatives
  • Shopping Guide
Description

The CSD25501F3T is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It is designed for high-efficiency applications, particularly in power management and conversion systems.

Key Features:

  1. Type: N-channel MOSFET

  2. Package: The device typically comes in a compact, surface-mount package, which allows for efficient thermal management and space-saving designs. The specific package type is often a DPAK or similar, facilitating easy integration into various circuit layouts.

  3. Voltage Rating: The CSD25501F3T has a maximum drain-source voltage (V_DS) rating of around 50V, making it suitable for a wide range of applications, including DC-DC converters and motor drivers.

  4. Current Rating: It can handle continuous drain current (I_D) of up to 30A, depending on the thermal conditions and the PCB layout, which allows it to be used in high-current applications.

  5. R_DS(on): One of the standout features of this MOSFET is its low on-resistance (R_DS(on)), typically in the range of a few milliohms. This characteristic minimizes power loss during operation, enhancing overall efficiency.

  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is relatively low, allowing for easy drive with standard logic levels. This feature is crucial for applications where rapid switching is required.

  7. Switching Speed: The CSD25501F3T is designed for fast switching, which is essential in applications like synchronous rectification and high-frequency converters. Its low gate charge (Q_g) contributes to reduced switching losses.

  8. Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a specified maximum junction temperature (T_j) of up to 150°C. This makes it suitable for demanding environments.

  9. Applications: Common applications include power supplies, battery management systems, motor control, and other power conversion applications where efficiency and thermal performance are critical.

Electrical Characteristics:

  • V_DS: 50V
  • I_D: 30A (continuous)
  • R_DS(on): Typically around 5-10 mΩ
  • V_GS(th): Approximately 1-2V
  • Q_g: Low gate charge for fast switching

Conclusion:

The CSD25501F3T from Texas Instruments is a versatile and efficient power MOSFET that is well-suited for a variety of high-performance applications. Its combination of low on-resistance, high current handling capability, and fast switching speeds makes it an excellent choice for engineers looking to optimize power management solutions in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance