Image is for your reference only, please check specifications for details
iconCompare
icon

CSD85312Q3E

  • In Stock: 96000
  • Available: 244691

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.20000US $1.20
10+US $0.80000US $8.00
30+US $0.60000US $18.00
100+US $0.48000US $48.00
500+US $0.44000US $220.00
1000+US $0.40000US $400.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ
  • esd
  • as
  • iso14001
  • iso9001
  • D&B

Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD85312Q3E
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.3mm
  • Length
    3.3mm
  • FET Type
    2 N-Channel (Dual) Common Source
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Rise Time
    27ns
  • Thickness
    900μm
  • FET Feature
    Logic Level Gate, 5V Drive
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    COMPLEX
  • Mounting Type
    Surface Mount
  • Terminal Form
    NO LEAD
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerVDFN
  • Contact Plating
    Gold
  • Fall Time (Typ)
    6 ns
  • Base Part Number
    CSD85312
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Factory Lead Time
    8 Weeks
  • Power Dissipation
    2.5W
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    2
  • Turn On Delay Time
    11 ns
  • Vgs(th) (Max) @ Id
    1.4V @ 250μA
  • Turn-Off Delay Time
    24 ns
  • Max Power Dissipation
    2.5W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    4
  • Rds On (Max) @ Id, Vgs
    12.4m Ω @ 10A, 8V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    40 pF
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    15.2nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    10V
  • Continuous Drain Current (ID)
    39A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    20V
  • Pulsed Drain Current-Max (IDM)
    76A
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance (Ciss) (Max) @ Vds
    2390pF @ 10V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e4
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

  • Shipping Methods

    Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.

  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

  • Professional Platform

  • Full-speed Delivery

  • Wide Variety of Products

  • 365 Days of Quality Assurance