CSD85312Q3E
- Manufacturer's Part No.:CSD85312Q3E
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET 2N-CH 20V 39A 8VSON
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 96000
- Available: 244691
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.20000 | US $1.20 |
10+ | US $0.80000 | US $8.00 |
30+ | US $0.60000 | US $18.00 |
100+ | US $0.48000 | US $48.00 |
500+ | US $0.44000 | US $220.00 |
1000+ | US $0.40000 | US $400.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD85312Q3E
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width3.3mm
- Length3.3mm
- FET Type2 N-Channel (Dual) Common Source
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Rise Time27ns
- Thickness900μm
- FET FeatureLogic Level Gate, 5V Drive
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationCOMPLEX
- Mounting TypeSurface Mount
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerVDFN
- Contact PlatingGold
- Fall Time (Typ)6 ns
- Base Part NumberCSD85312
- Lifecycle StatusACTIVE (Last Updated: 5 days ago)
- Factory Lead Time8 Weeks
- Power Dissipation2.5W
- Additional FeatureAVALANCHE RATED
- Number of Elements2
- Turn On Delay Time11 ns
- Vgs(th) (Max) @ Id1.4V @ 250μA
- Turn-Off Delay Time24 ns
- Max Power Dissipation2.5W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations4
- Rds On (Max) @ Id, Vgs12.4m Ω @ 10A, 8V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)40 pF
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs15.2nC @ 4.5V
- Gate to Source Voltage (Vgs)10V
- Continuous Drain Current (ID)39A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)20V
- Pulsed Drain Current-Max (IDM)76A
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds2390pF @ 10V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee4
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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