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CSD86311W1723

  • Available: 158119

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.41120US $1.41
10+US $0.94080US $9.41
30+US $0.70560US $21.17
100+US $0.56448US $56.45
500+US $0.51744US $258.72
1000+US $0.47040US $470.40

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD86311W1723
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    NexFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    0m
  • Height
    625μm
  • Length
    0m
  • FET Type
    2 N-Channel (Dual)
  • HTS Code
    8541.29.00.95
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    12
  • Rise Time
    4.3ns
  • Thickness
    375μm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    BALL
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    12
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    12-UFBGA, DSBGA
  • Fall Time (Typ)
    2.9 ns
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Base Part Number
    CSD86311
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    6 Weeks
  • Power Dissipation
    1.5W
  • Terminal Position
    BOTTOM
  • Threshold Voltage
    1V
  • Number of Elements
    2
  • Turn On Delay Time
    5.4 ns
  • Vgs(th) (Max) @ Id
    1.4V @ 250μA
  • Turn-Off Delay Time
    13.2 ns
  • Qualification Status
    Not Qualified
  • Element Configuration
    Dual
  • Max Power Dissipation
    1.5W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    12
  • Rds On (Max) @ Id, Vgs
    39m Ω @ 2A, 8V
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    13 pF
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    4nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    10V
  • Continuous Drain Current (ID)
    4.5A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    25V
  • Drain-source On Resistance-Max
    0.051Ohm
  • Drain to Source Breakdown Voltage
    25V
  • Input Capacitance (Ciss) (Max) @ Vds
    585pF @ 12.5V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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