CSD86336Q3D
- Manufacturer's Part No.:CSD86336Q3D
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- Series:NexFET™
- Description:25V POWERBLOCK N CH MOSFET
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- In Stock: 5000
- Available: 2500
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.20080 | US $2.20 |
10+ | US $1.46720 | US $14.67 |
30+ | US $1.10040 | US $33.01 |
100+ | US $0.88032 | US $88.03 |
500+ | US $0.80696 | US $403.48 |
1000+ | US $0.73360 | US $733.60 |
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- Description
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The CSD86336Q3D is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This device is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-efficiency circuits.
Key Features:
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Type and Configuration: The CSD86336Q3D is a N-channel MOSFET, which means it uses electrons as the charge carriers. This type of MOSFET is known for its high conductivity and efficiency.
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Package: It comes in a compact, surface-mount package, specifically the DPAK (TO-252) or similar, which allows for easy integration into various circuit designs while minimizing space on the PCB.
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Voltage and Current Ratings: The device typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications. It can handle continuous drain currents (I_D) of up to 60A, depending on the thermal management and PCB layout.
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R_DS(on): One of the standout features of the CSD86336Q3D is its low on-resistance (R_DS(on)), which is often in the range of a few milliohms. This low resistance minimizes power loss during operation, enhancing overall efficiency.
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Thermal Performance: The MOSFET is designed to operate efficiently at elevated temperatures, with a specified maximum junction temperature (T_J) of around 150°C. This allows it to be used in demanding environments without compromising performance.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically low, allowing for easy drive from standard logic levels. This feature is crucial for applications where rapid switching is required.
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Switching Speed: The CSD86336Q3D is optimized for fast switching, making it ideal for applications such as synchronous rectification in power supplies, where quick transitions between on and off states are necessary to reduce losses.
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Applications: Common applications include DC-DC converters, battery management systems, and motor control circuits. Its efficiency and thermal performance make it suitable for both consumer electronics and industrial applications.
Summary:
The CSD86336Q3D from Texas Instruments is a robust and efficient N-channel MOSFET that excels in power management applications. With its low on-resistance, high current handling capability, and compact packaging, it is an excellent choice for designers looking to optimize performance and efficiency in their electronic circuits.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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