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CSD87313DMST

  • In Stock: 70000
  • Available: 1000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.13092US $2.13
10+US $1.91783US $19.18
30+US $1.49164US $44.75
100+US $1.22528US $122.53
500+US $1.17201US $586.01
1000+US $1.06546US $1065.46

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    CSD87313DMST
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    NexFET™
  • ECCN
    EAR99
  • Width
    3.3mm
  • Length
    3.3mm
  • FET Type
    2 N-Channel (Dual) Common Drain
  • Packaging
    Tape & Reel (TR)
  • Thickness
    750μm
  • FET Feature
    Standard
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    2.7W
  • REACH Status
    REACH Unaffected
  • Configuration
    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    NO LEAD
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-PowerWDFN
  • Case Connection
    SOURCE
  • Base Part Number
    CSD87313
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    6 Weeks
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Transistor Application
    SWITCHING
  • Feedback Cap-Max (Crss)
    200 pF
  • Drain to Source Resistance
    5.5mOhm
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    28nC @ 4.5V
  • Avalanche Energy Rating (Eas)
    67 mJ
  • Drain to Source Voltage (Vdss)
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    4290pF @ 15V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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