CSD87335Q3DT
- Manufacturer's Part No.:CSD87335Q3DT
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- Series:NexFET™
- Description:MOSFET 2N-CH 30V 25A
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- In Stock: 72546
- Available: 35
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.81010 | US $2.81 |
10+ | US $1.87340 | US $18.73 |
30+ | US $1.40505 | US $42.15 |
100+ | US $1.12404 | US $112.40 |
500+ | US $1.03037 | US $515.19 |
1000+ | US $0.93670 | US $936.70 |
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- Description
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- Shopping Guide
The CSD87335Q3DT is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This device is designed for applications requiring efficient power management, such as in DC-DC converters, power supplies, and motor control systems.
Key Features:
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Package Type: The CSD87335Q3DT comes in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs). The QFN package typically features a low profile and a small footprint, making it suitable for modern electronic designs.
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Voltage Rating: This MOSFET is rated for a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications. Its voltage rating ensures reliable operation in various power management scenarios.
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Current Rating: The device can handle a continuous drain current (I_D) of up to 60A, which allows it to manage significant power loads effectively. This high current rating is essential for applications that require robust performance under varying load conditions.
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R_DS(on): The CSD87335Q3DT features a low on-resistance (R_DS(on)) value, typically around 5.5 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance minimizes conduction losses, enhancing overall efficiency and thermal performance during operation.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is specified to ensure that the MOSFET turns on effectively at lower gate voltages, which is beneficial for driving circuits that operate at lower voltages.
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Thermal Performance: The QFN package design aids in heat dissipation, allowing the device to operate at higher power levels without overheating. The thermal resistance characteristics are optimized for efficient heat management.
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Applications: The CSD87335Q3DT is ideal for a variety of applications, including:
- Synchronous buck converters
- Power management ICs
- Battery management systems
- LED drivers
- Motor drivers
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Reliability: Texas Instruments is known for its commitment to quality and reliability, and the CSD87335Q3DT is no exception. The device is designed to meet stringent industry standards, ensuring long-term performance in demanding environments.
Conclusion:
The CSD87335Q3DT from Texas Instruments is a versatile and efficient power MOSFET that caters to a wide range of applications requiring high current handling and low power loss. Its compact QFN package, combined with its robust electrical characteristics, makes it an excellent choice for modern power management solutions.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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